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IRLML5103

PowerMOSFET(Vdss=-30V,Rds(on)=0.60ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET?powerMOSFETsarewellknownfor,provid

IRF

International Rectifier

IRLML5103

HEXFETPowerMOSFET

IRF

International Rectifier

IRLML5103

PowerMOSFET

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

IRLML5103

GenerationVTechnology

Features GenerationVTechnology UltraLowOn-Resistance P-ChannelMOSFET SOT-23Footprint LowProfile(

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRLML5103

MOSFET

Features GenerationVTechnology UltraLowOn-Resistance P-ChannelMOSFET SOT-23Footprint LowProfile(

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLML5103GPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRLML5103GTRPBF

GenerationVTechnology

IRF

International Rectifier

IRLML5103PBF

HEXFET-RPOWERMOSFET

IRF

International Rectifier

IRLML5103PBF

ULTRALOWONRESISFANCE

IRF

International Rectifier

IRLML5103TR

GenerationVTechnology

Features GenerationVTechnology UltraLowOn-Resistance P-ChannelMOSFET SOT-23Footprint LowProfile(

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRLML5103TR

MOSFET

Features GenerationVTechnology UltraLowOn-Resistance P-ChannelMOSFET SOT-23Footprint LowProfile(

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRLML5103TRPBF

generationvtechnology

IRF

International Rectifier

KTC5103D

EPITAXIALPLANARNPNTRANSISTOR(LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT)

LOWCOLLECTORSATURATIONVOLTAGE LARGECURRENT FEATURES ?HighPowerDissipation:PC=1.3W(Ta=25°C) ?ComplementarytoKTA1385D/L

KECKEC CORPORATION

KEC株式會社

KTC5103L

EPITAXIALPLANARNPNTRANSISTOR(LOWCOLLECTORSATURATIONVOLTAGELARGECURRENT)

LOWCOLLECTORSATURATIONVOLTAGE LARGECURRENT FEATURES ?HighPowerDissipation:PC=1.3W(Ta=25°C) ?ComplementarytoKTA1385D/L

KECKEC CORPORATION

KEC株式會社

KTC5103L

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=2A APPLICATIONS ·Designedforpoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KTC5103L

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=2A APPLICATIONS ·Designedforpoweramplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

LML5103

P-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

LML5103G

P-Channel30V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

LV5103LP

Bi-CMOSLSICellPhonePowerSupplyIC

SANYOSanyo Semicon Device

三洋三洋電機株式會社

M5103

TiteAluminumLiquidTightCordgrips

HeycoHeyco.

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IR
23+
SOT23
6850
只做原廠原裝正品現(xiàn)貨!假一賠十!
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IR
1742+
SOT23
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
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量大可定IR
20+
SOT23
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
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IR
2020+
SOT23
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
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IR
23+
SOT23
15000
一級代理原裝現(xiàn)貨
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IR
21+
SOT23
20000
只做正品原裝現(xiàn)貨
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IR
21+
SOT23
846
原裝現(xiàn)貨假一賠十
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IR
21+
SOT23
2538
只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
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IR
21+
SOT23
6000
原裝正品
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IR
23+
SOT23
10000
公司只做原裝正品
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更多IRLM5103TRPBF供應(yīng)商 更新時間2025-1-14 17:26:00

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