首頁(yè) >IS41LV16100>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

IS41LV16100

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-50TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100-60TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41C16100andIS41LV16100are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50KL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50KLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41LV16100A-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100Ais1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IS41LV16100

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI
24+
BGA QFP
13500
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
ISSI
23+
原裝
9680
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價(jià)
ISSI
23+
9920
原裝正品,支持實(shí)單
詢價(jià)
ISSI
23+
98900
原廠原裝正品現(xiàn)貨!!
詢價(jià)
ISSI
23+
SSOP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI
23+
SSOP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI
24+
6880
只做原裝,公司現(xiàn)貨庫(kù)存
詢價(jià)
ISSI
TSOP44
0405+
1269
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢價(jià)
ISSI
23+
TSOP
35890
詢價(jià)
ISSI
06+
TSOP
1000
自己公司全新庫(kù)存絕對(duì)有貨
詢價(jià)
更多IS41LV16100供應(yīng)商 更新時(shí)間2025-1-18 17:06:00