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IS41LV16105B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

詳細參數(shù)

  • 型號：

    IS41LV16105B-60T-TR

  • 功能描述：

    動態(tài)隨機存取存儲器 16M 1Mx16 60ns

  • RoHS：

    否

  • 制造商：

    ISSI

  • 數(shù)據(jù)總線寬度：

    16 bit

  • 組織：

    1 M x 16

  • 封裝/箱體：

    SOJ-42

  • 存儲容量：

    16 MB

  • 訪問時間：

    50 ns

  • 電源電壓-最大：

    7 V

  • 電源電壓-最?。?/span>

    - 1 V

  • 最大工作電流：

    90 mA

  • 最大工作溫度：

    + 85 C

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
ISSI
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ISSI
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
ISSI
2020+
SOJ(42)
3850
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ISSI Integrated Silicon Soluti
22+
42SOJ
9000
原廠渠道,現(xiàn)貨配單
 詢價
ISSI Integrated Silicon Soluti
21+
42SOJ
13880
公司只售原裝,支持實單
 詢價
ISSI Integrated Silicon Soluti
23+
42SOJ
9000
原裝正品，支持實單
 詢價
ISSI, Integrated Silicon Solut
24+
42-SOJ
56200
一級代理/放心采購
 詢價
ISSI
1931+
N/A
493
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
ISSI
20+
SOP-42
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
ISSI
21+
SOJ42
100
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IS41LV16105B-60T-TR供應商 更新時間2025-1-8 15:21:00

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