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IS41LV16105B-60KLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KLI

包裝：卷帶（TR） 封裝/外殼：42-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 16MBIT PARALLEL 42SOJ

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS41LV16105B-60KLI-TR

包裝：卷帶（TR） 封裝/外殼：42-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 16MBIT PARALLEL 42SOJ

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

ISSI, Integrated Silicon Solution Inc

IS41LV16105B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60KLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TL

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TLE

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS41LV16105B-60TLI

1Mx16(16-MBIT)DYNAMICRAMWITHFASTPAGEMODE

DESCRIPTION TheISSIIS41LV16105Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,makestheIS41LV

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

產品屬性

  • 產品編號：

    IS41LV16105B-60KLI

  • 制造商：

    ISSI, Integrated Silicon Solution Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    卷帶（TR）

  • 存儲器類型：

    易失

  • 存儲器格式：

    DRAM

  • 技術：

    DRAM - FP

  • 存儲容量：

    16Mb（1M x 16）

  • 存儲器接口：

    并聯

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    42-BSOJ（0.400"，10.16mm 寬）

  • 供應商器件封裝：

    42-SOJ

  • 描述：

    IC DRAM 16MBIT PARALLEL 42SOJ

供應商型號品牌批號封裝庫存備注價格
ISSI
23+
42-SOJ
39257
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
 詢價
ISSI
2020+
SOJ(42)
3850
百分百原裝正品 真實公司現貨庫存 本公司只做原裝 可
 詢價
ISSI, Integrated Silicon Solut
24+
42-SOJ
56200
一級代理/放心采購
 詢價
ISSIINTEGRATEDSILICONSOLUTIONI
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
 詢價
ISSI
20+
SOP-42
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進口現貨
 詢價
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
專注配單,只做原裝進口現貨
 詢價
ISSI Integrated Silicon Solut
24+
42-BSOJ(0.400 10.16mm 寬)
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
ISSI Integrated Silicon Soluti
22+
42SOJ
9000
原廠渠道,現貨配單
 詢價
ISSI Integrated Silicon Soluti
21+
42SOJ
13880
公司只售原裝,支持實單
 詢價
更多IS41LV16105B-60KLI供應商 更新時間2025-1-8 16:30:00

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