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| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IS43TR16256A | 512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES ●StandardVoltage:VDDandVDDQ=1.5V±0.075V ●LowVoltage(L):VDDandVDDQ=1.35V+0.1V,-0.067V -Backwardcompatibleto1.5V ●Highspeeddatatransferrateswithsystemfrequencyupto1066MHz ●8internalbanksforconcurrentoperation ●8n-Bitpre-fetcharchitecture | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
包裝：托盤 封裝/外殼：96-TFBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 4GBIT PARALLEL 96TWBGA | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
包裝：散裝 封裝/外殼：96-TFBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 4GBIT PARALLEL 96TWBGA | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
包裝：托盤 封裝/外殼：96-TFBGA 類別：集成電路（IC） 存儲(chǔ)器 描述：IC DRAM 4GBIT PARALLEL 96TWBGA | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI |
詳細(xì)參數(shù)
- 型號(hào)：
IS43TR16256A
- 制造商：
Integrated Silicon Solution Inc
- 功能描述：
DRAM Chip DDR3 SDRAM 4G-Bit 256Mx16 1.35V 96-Pin FBGA
- 功能描述：
IC DDR3 SDRAM 4GBIT 96FBGA
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ISSI |
22+ |
NA |
500000 |
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂 |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
SOT-343 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ISSI |
23+ |
BGA |
4500 |
ISSI存儲(chǔ)芯片在售 |
詢價(jià) | ||
ISSI |
23+ |
FBGA96 |
3200 |
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
ISSI |
2020+ |
BGA |
535 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ISSI |
24+ |
BGA |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
ISSI |
1706+ |
? |
8450 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
ISSI |
19+ |
BGA96 |
75389 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
ISSI |
2021+ |
BGA |
10270 |
原裝正品假一罰十 |
詢價(jià) | ||
ISSI |
2018+ |
FBGA96 |
12000 |
專營(yíng)ISSI進(jìn)口原裝正品假一賠十可開17增值稅票 |
詢價(jià) |
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