DESCRIPTION

The ISSI IS62WV2568ALL / IS62WV2568BLL are highspeed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

? High-speed access time: 55ns, 70ns

? CMOS low power operation

– 36 mW (typical) operating

– 9 μW (typical) CMOS standby

? TTL compatible interface levels

? Single power supply

– 1.65V--2.2V VCC (62WV2568ALL)

– 2.5V--3.6V VCC (62WV2568BLL)

? Fully static operation: no clock or refresh required

? Three state outputs

? Industrial temperature available

? Lead-free available

IS62WV2568BLL-70HI屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS62WV2568BLL-70HI存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。