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首頁 >IXER20N120>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXER20N120	文件：364.02 Kbytes Page：4 Pages	NPT3 IGBT in ISOPLUS247	IXYS IXYS Corporation	IXYS
IXER20N120D1	文件：364.02 Kbytes Page：4 Pages	NPT3 IGBT in ISOPLUS247	IXYS IXYS Corporation	IXYS
IXFK20N120	文件：328.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK20N120	文件：574.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFK20N120P	文件：122.12 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFK20N120P	文件：328.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.57Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFN20N120	文件：572.36 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated	IXYS IXYS Corporation	IXYS
IXFN20N120P	文件：113.97 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInductive	IXYS IXYS Corporation	IXYS
IXFR20N120	文件：330.17 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=630mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR20N120P	文件：117.18 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFX20N120	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX20N120	文件：574.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX20N120P	文件：122.12 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXGA20N120	文件：78.17 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand	IXYS IXYS Corporation	IXYS
IXGH20N120	文件：120.07 Kbytes Page：2 Pages	IGBT VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan	IXYS IXYS Corporation	IXYS
IXGH20N120B	文件：574.24 Kbytes Page：5 Pages	HighVoltageIGBT VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features ?HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers ?Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD ?Lowswitchinglosses,	IXYS IXYS Corporation	IXYS
IXGP20N120	文件：78.17 Kbytes Page：2 Pages	IGBT Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand	IXYS IXYS Corporation	IXYS
IXGP20N120B	文件：586.46 Kbytes Page：5 Pages	HighVoltageIGBTwithDiode	IXYS IXYS Corporation	IXYS
IXGQ20N120B	文件：598.7 Kbytes Page：6 Pages	HighVoltageIGBTwithDiode Features ●Internationalstandardpackage ●IGBTandanti-parallelFREDfor resonantpowersupplies -Inductionheating -Ricecookers ●MOSGateturn-on -drivesimplicity ●FastRecoveryExpitaxialDiode(FRED) -softrecoverywithlowIRM Advantages ●Savesspace(two	IXYS IXYS Corporation	IXYS
IXGT20N120	文件：120.07 Kbytes Page：2 Pages	IGBT VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號：
IXER20N120
制造商：
IXYS
制造商全稱：
IXYS Corporation
功能描述：
NPT3 IGBT in ISOPLUS247

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	IXER23N120DI	IXYS/艾賽斯	23+	TO-3P	20000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IXER35N120		24+		8866		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	IXER35N120D1	IXYS	23+	TO-247	7512	絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!	詢價(jià)
深圳市博浩通科技有限公司	IXER35N120D1	IXYS	23+	TO-247	9960	價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢	詢價(jià)
深圳市永貝爾科技有限公司	IXER35N120D1	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市佳鑫美電子科技有限公司	IXER35N120D1	IXYS	24+	TO-247	2685	原裝優(yōu)勢!自家現(xiàn)貨供應(yīng)!歡迎來電!	詢價(jià)
瀚佳科技(深圳)有限公司	IXER35N120D1	IXYS	18+	TO-247	2050	公司大量全新原裝正品隨時(shí)可以發(fā)貨	詢價(jià)
深圳市科雨電子有限公司	IXER35N120D1	IXYS	1503+	TO-247	3000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IXER35N120D1	IXYS/艾賽斯	23+	TO-247	10000	公司只做原裝正品	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IXER35N120D1	IXYS/艾賽斯	21+	TO-247	10000	原裝現(xiàn)貨假一罰十	詢價(jià)

更多IXER20N120供應(yīng)商更新時(shí)間2024-12-24 9:30:00

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