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IXFA20N50P3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA20N50P3

Preliminary Technical Information

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFA20N50P3

Power MOSFET

IXYS

IXYS Corporation

IXFA20N50P3_V01

Power MOSFET

IXYS

IXYS Corporation

IXFH20N50P3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N50P3

PowerMOSFET

IXYS

IXYS Corporation

IXFH20N50P3

PreliminaryTechnicalInformation

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFP20N50P3

PreliminaryTechnicalInformation

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFP20N50P3

PowerMOSFET

IXYS

IXYS Corporation

IXFP20N50P3M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Features ?PlasticOvermoldedTabforElectricalIsolation ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Appli

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    IXFA20N50P3

  • 功能描述:

    MOSFET Polar3 HiPerFET Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-263(IXFA)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
IXYS/艾賽斯
23+
TO-263
325680
原裝正品 華強(qiáng)現(xiàn)貨
詢價(jià)
IXYS
23+
TO-263-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
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IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
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IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IXYS
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原裝正品,支持實(shí)單
詢價(jià)
IXYS
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
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更多IXFA20N50P3供應(yīng)商 更新時(shí)間2025-1-24 14:14:00