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IXFA5N100P

Polar Power MOSFET HiPerFET

IXYS

IXYS Corporation

IXFH5N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH5N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH5N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFM5N100

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFP5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP5N100P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFP5N100PM

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTH5N100

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH5N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH5N100A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH5N100A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM5N100

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM5N100

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2.4Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM5N100A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=1000V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=2Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsf

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM5N100A

StandardPowerMOSFET

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

MTH5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTM5N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

OM5N100NK

POWERMOSFETSINATO-3PACKAGE

ETCList of Unclassifed Manufacturers

未分類制造商

詳細參數(shù)

  • 型號：

    IXFA5N100P

  • 功能描述：

    MOSFET Polar Power MOSFET HiPerFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-263(IXFA)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IXYS/艾賽斯
23+
TO-263
56230
原裝正品 華強現(xiàn)貨
 詢價
IXYS
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS/艾賽斯
21+
TO-263
30000
只做正品原裝現(xiàn)貨
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-263
375
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-263
10000
公司只做原裝正品
 詢價
IXYS/艾賽斯
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXFA5N100P供應(yīng)商 更新時間2025-1-3 16:36:00

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