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IXFC14N60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.63Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC14N60P

PolarHV HiPerFET Power MOSFET

IXYS

IXYS Corporation

IXFH14N60

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Corporation

IXFH14N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFH14N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=550mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Corporation

IXFP14N60P

PowerMOSFET

IXYS

IXYS Corporation

IXTA14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

PolarHVTMPowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP14N60PM

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTQ14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號:

    IXFC14N60P

  • 功能描述:

    MOSFET 600V 14A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS/艾賽斯
23+
ISOPLUS220
10000
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IXYS
22+
ISOPLUS220?
9000
原廠渠道,現(xiàn)貨配單
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IXYS
23+
ISOPLUS220
6000
原裝正品,支持實(shí)單
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IXYS
2022+
ISOPLUS220?
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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IXYS
22+
ISOPLUS220
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
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IXYS
24+
ISOPLUS22
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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IXYS
23+
TO-220
11846
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IXYS/艾賽斯
23+
ISOPLUS22
43000
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詢價(jià)
原裝正品
23+
TO-220
60423
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更多IXFC14N60P供應(yīng)商 更新時(shí)間2025-1-2 14:30:00