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IXGT20N120

IGBT

VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan

IXYS

IXYS Corporation

IXGT20N120

包裝：管件 封裝/外殼：TO-268-3，D3Pak（2 引線 + 接片），TO-268AA 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 40A 150W TO268

IXYS

IXYS Corporation

IXGT20N120B

High Voltage IGBT

VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features ?HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers ?Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD ?Lowswitchinglosses,

IXYS

IXYS Corporation

IXGT20N120BD1

High Voltage IGBT with Diode

IXYS

IXYS Corporation

MGW20N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW20N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NGTB20N120IHLWG

Incorporatedintothedeviceisaruggedco??ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB20N120IHRWG

IGBTwithMonolithicFreeWheelingDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB20N120IHSWG

IGBT

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB20N120IHWG

IGBT-InductionCooking

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB20N120LWG

Incorporatedintothedeviceisaruggedco??ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SCM20N120PCT

1200V/20mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SCM20N120PS

1200V/20mΩN-channelSiCPowerMOSFET

Features Lowon-resistanceRDS(on) Bestthermalconductivityandbehavior Highspeedswitching Highrobustnessofdv/dt Lowcapacitancesandlowgatecharge Lowgateresistanceforhigh-frequencyswitching Easytoparallel HalogenFree,RoHSCompliant Applications Switchingmodepower

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SCT20N120

Veryhighoperatingtemperaturecapability

Description ThissiliconcarbidePowerMOSFETisproducedexploitingtheadvanced,innovativepropertiesofwidebandgapmaterials.Thisresultsinunsurpassedon-resistanceperunitareaandverygoodswitchingperformancealmostindependentoftemperature.Theoutstandingthermalpropertiesof

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT20N120AG

Automotive-gradesiliconcarbidePowerMOSFET1200V,20A,189m廓(typ.,TJ=150?C),inanHiP247package

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SCT20N120H

SiCN-ChannelMOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·HighSpeedSwitchingwithLowCapacitances ·EasytoParallelandSimpletoDrive ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageDC/DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SGH20N120RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH20N120RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinvertersw

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IXGT20N120

  • 制造商：

    IXYS

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2.5V @ 15V，20A

  • 開關(guān)能量：

    6.5mJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時 Td（開/關(guān)）值：

    28ns/400ns

  • 測試條件：

    800V，20A，47 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-268-3，D3Pak（2 引線 + 接片），TO-268AA

  • 供應(yīng)商器件封裝：

    TO-268AA

  • 描述：

    IGBT 1200V 40A 150W TO268

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO268
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO268
13880
公司只售原裝,支持實(shí)單
 詢價
IXYS/艾賽斯
23+
TO-268
6000
原裝正品，支持實(shí)單
 詢價
IXYS
2022+
TO-268
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價
IXYS/艾賽斯
22+
TO-268
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
更多IXGT20N120供應(yīng)商 更新時間2025-1-9 9:01:00

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