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IXFN36N60

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpol

IXYS

IXYS Corporation

FCA36N60NF

N-ChannelMOSFET,FRFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCA36N60NF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCB36N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCB36N60N

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCB36N60N

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCB36N60NTM

N-ChannelSupreMOS?MOSFET600V,36A,90m廓

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

AC-DCPowerSupply

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP36N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN36N60

  • 功能描述：

    MOSFET 600V 36A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
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德國IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
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IXYS/艾賽斯
15+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
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IXYS
24+
SOT-227BminiBLOC
241
詢價(jià)
IXYS
23+
模塊
3562
詢價(jià)
IXYS
23+
模塊
320
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢(shì)!
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IXYS
23+
原廠原裝
9960
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
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IXYS場(chǎng)效應(yīng)
100
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IXYS
23+
模塊
5000
原裝正品,假一罰十
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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更多IXFN36N60供應(yīng)商 更新時(shí)間2025-1-20 14:26:00

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