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IXTP16N50PM

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP16N50PM

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXYS

IXYS Corporation

IXTQ16N50P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTQ16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KF16N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=17A ?Drain-SourceONRes

KECKEC CORPORATION

KEC株式會社

KF16N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=17A ?Drain-SourceONRes

KECKEC CORPORATION

KEC株式會社

MDF16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDQ16N50G

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTH

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDQ16N50GTP

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MSF16N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSW16N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTV16N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTV16N50E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
I
23+
TO-220F
10000
公司只做原裝正品
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I
22+
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6000
十年配單,只做原裝
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IXYS/艾賽斯
23+
TO-220
79999
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23+
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6000
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infineon
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80000
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I
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
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I
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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IXYS
24+
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100
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IXYS
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11846
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更多IXTP16N50PM供應(yīng)商 更新時間2025-1-6 14:30:00

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