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IXFH60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFK60N25Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFP60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFQ60N25

iscN-ChannelMOSFETTransistor

FEATURES DrainCurrent-ID=60A@TC=25℃ DrainSourceVoltage-VDSS=250V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFT60N25Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXTH60N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighPowerdensity

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTT60N25

N-ChannelEnhancementMode

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-268
8866
詢(xún)價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢(xún)價(jià)
IXYS
1809+
TO-268
326
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢(xún)價(jià)
IXYS/艾賽斯
23+
TO-268
10000
公司只做原裝正品
 詢(xún)價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢(xún)更多詳細(xì)信息,
 詢(xún)價(jià)
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢(xún)價(jià)
IXYS
21+
TO2683 D3Pak (2 Leads + Tab) T
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
 詢(xún)價(jià)
更多IXTT60N25P供應(yīng)商 更新時(shí)間2025-1-27 15:30:00

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