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IXTY1N100P

Polar Power MOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N100E

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCmotorcontrols ·LaserDrivers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N100E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP1N100E

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

OM1N100SA

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

OM1N100ST

POWERMOSFETINHERMETICISOLATEDJEDECPACKAGE

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

T1N100DL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團ABB（中國）有限公司

T1N100TL

TmaxMoldedCaseCircuitBreakers

ABBabb

ABB集團ABB（中國）有限公司

UPF1N100

SURFACEMOUNTN.CHANNELMOSFET

Description ThisdeviceisanN-Channelenhancementmode,highdensityMOSFET.Itispassivatedwith4um(40kA)ofoxynitride,andsuppliedinathreeleadedpackage. Features ?RuggedPOWERMITE3?SurfaceMountPackage ?LowOn-StateResistance ?AvalancheandSurgeRated ?HighFrequency

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細參數(shù)

  • 型號：

    IXTY1N100P

  • 功能描述：

    MOSFET 1 Amps 1000V 14 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-252AA
30000
晶體管-分立半導體產(chǎn)品-原裝正品
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IXYS
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS/艾賽斯
21+
TO-252(DPAK)
30000
只做正品原裝現(xiàn)貨
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-252
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-252
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
TO-252
6000
原裝正品，支持實單
 詢價
更多IXTY1N100P供應商 更新時間2025-1-13 20:17:00

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