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MDF7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60B

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP7N60ED

InsulatedGateBipolarTransistorwithrAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packaged withasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringboth

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    JCS7N60

  • 制造商：

    JSMC

  • 制造商全稱(chēng)：

    JILIN SINO-MICROELECTRONICS CO., LTD.

  • 功能描述：

    N-CHANNEL MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
吉林華微
2016+
TO-220F
5630
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢(xún)價(jià)
JCF
25+23+
TO220F
31643
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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JCS
21+
TO-220F
12588
原裝正品,自己庫(kù)存 假一罰十
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J
24+
TO-220M
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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吉林華微
2447
TO-220MF
105000
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
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華微/韓國(guó)太虹
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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華微
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
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SINO-MICRO
2022+
TO-220F
32500
原廠代理 終端免費(fèi)提供樣品
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INTF
23+
TO220
4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售
 詢(xún)價(jià)
TH/韓國(guó)太虹
2048+
TO-220
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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更多JCS7N60供應(yīng)商 更新時(shí)間2025-4-26 22:58:00

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