零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Highspeedswitching | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
SEMICONDUCTOR | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
ThisSuperJunctionMOSFEThasbettercharacteristics | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
IGBT-Short-CircuitRated | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
- |
23+ |
TO220F |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
SXSEMI |
24+ |
SOD123FL |
900000 |
原裝進(jìn)口特價(jià) |
詢價(jià) | ||
NAIS |
24+ |
20216 |
詢價(jià) | ||||
松下 |
23+ |
繼電器 |
9896 |
詢價(jià) | |||
PANASONIC |
2016+ |
DIP |
26520 |
全新原裝,假一罰十,公司主營(yíng)繼電器! |
詢價(jià) | ||
PANASON |
2020+ |
DIP5 |
482 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
松下 |
1736+ |
RELAY |
8529 |
專營(yíng)繼電器只做原裝正品假一賠十! |
詢價(jià) | ||
24+ |
2789 |
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||||
PANASON |
23+ |
DIP5 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
Nais |
23+ |
NA |
17120 |
專做原裝正品,假一罰百! |
詢價(jià) |
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