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K4N60LV

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF4N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60D

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF4N60D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=4A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KSM4N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB4N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD4N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF4N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU4N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KX4N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KX4N60F

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MDD4N60

N-ChannelMOSFET600V,3.5A,2.0ohm

MGCHIP

MagnaChip Semiconductor.

MDD4N60BRH

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MDD4N60RH

N-ChannelMOSFET600V,3.5A,2.0ohm

MGCHIP

MagnaChip Semiconductor.

MDI4N60

N-ChannelMOSFET600V,3.5A,2.0?

GeneralDescription TheseN-channelMOSFETareproducedusingadvanced MagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellent quality. ThesedevicesaresuitabledeviceforSMPS,highSpeed switchingandgeneralpurposeapplications.

MGCHIP

MagnaChip Semiconductor.

MDI4N60B

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

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更多K4N60LV供應(yīng)商 更新時(shí)間2025-1-7 11:03:00