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K4T51163QB-GCCC

512Mb B-die DDR2 SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB-ZCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QE

512MbE-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLCC

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QI

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QQ-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4T51163QB-GCCC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    512Mb B-die DDR2 SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
23+
BGA
20000
全新原裝熱賣/假一罰十!更多數(shù)量可訂貨
 詢價
SAM
24+
BGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
SAM
06+
BGA
1000
全新原裝 絕對有貨
 詢價
SAMSUNG
04+
BGA
32
詢價
SAMSUNG
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
SAMS
6000
面議
19
DIP/SMD
 詢價
SAM
22+
BGA
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
SAM
21+
BGA
10000
原裝現(xiàn)貨假一罰十
 詢價
SAMSUNG/三星
23+
BGA
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SAMSUNG
22+
BGA
8000
原裝正品支持實(shí)單
 詢價
更多K4T51163QB-GCCC供應(yīng)商 更新時間2024-11-17 14:04:00

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