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K4T51163QG

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLCC

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLD5

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLE6

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLE7

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QG-HCLF7

512Mb G-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB-GCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QB-ZCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZCLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QC-ZLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QE

512MbE-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QI

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4T51163QQ-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4T51163QG

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    512Mb G-die DDR2 SDRAM Specification

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SANSUNG
10+
BGA
18
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
SAMSUNG
19+
BGA
76124
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
BGA
51
詢價(jià)
SAMSUNG/三星
23+
BGA
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
SAM
24+
130
詢價(jià)
SEC
BGA
08+
7
全新原裝進(jìn)口自己庫存優(yōu)勢(shì)
 詢價(jià)
SAMSUN
23+
84FBGA
4200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
SAMSUN
13+
BGA
1000
特價(jià)熱銷現(xiàn)貨庫存
 詢價(jià)
SAMSUNG
2020+
BGA
768
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
SAMSUNG
22+
BGA
960
詢價(jià)
更多K4T51163QG供應(yīng)商 更新時(shí)間2024-11-17 14:04:00

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