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K4T51163QE

512Mb E-die DDR2 SDRAM Specification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomply

SamsungSamsung semiconductor

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K4T51163QB

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

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K4T51163QB-GCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

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K4T51163QB-ZCCC

512MbB-dieDDR2SDRAM

DDR2SDRAM The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddouble data-ratetransferratesofupto533Mb/sec/pin(DDR2-533)for generalapplications. Thechip

SamsungSamsung semiconductor

三星三星半導體

K4T51163QC-ZCCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導體

K4T51163QC-ZCLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導體

K4T51163QC-ZLCC

512MbC-dieDDR2SDRAM

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banks,16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. Thechipisdesignedtocomplywi

SamsungSamsung semiconductor

三星三星半導體

K4T51163QG

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導體

K4T51163QG

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導體

K4T51163QG-HCLCC

512MbG-dieDDR2SDRAMSpecification

The512MbDDR2SDRAMisorganizedasa32Mbitx4I/Osx4banksor16Mbitx8I/Osx4banksor8Mbitx16I/Osx4banksdevice.Thissynchronousdeviceachieveshighspeeddoubledata-ratetransferratesofupto800Mb/sec/pin(DDR2-800)forgeneralapplications. KeyFeatures ?JEDECstan

SamsungSamsung semiconductor

三星三星半導體

K4T51163QI

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導體

K4T51163QQ-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半導體

詳細參數

  • 型號:

    K4T51163QE

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    512Mb E-die DDR2 SDRAM Specification

供應商型號品牌批號封裝庫存備注價格
BGA
65
詢價
Samsung
23+
TSOP
18689
詢價
SANSUNG
13+
BGA
9500
特價熱銷現(xiàn)貨庫存
詢價
SAMSUNG
23+
BGA
7100
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
詢價
SEC
BGA
07+
14
全新原裝進口自己庫存優(yōu)勢
詢價
SAMSUNG
2020+
BGA
171
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
SANSUNG
16+
BGA
8000
原裝現(xiàn)貨請來電咨詢
詢價
SAMSUNG
2022
BGA
2550
原廠原裝正品,價格超越代理
詢價
SAMSUNG
07+
BGA
2
詢價
SAMSUNG
24+
6980
原裝現(xiàn)貨,可開13%稅票
詢價
更多K4T51163QE供應商 更新時間2024-11-17 8:00:00