首頁 >L1N60Z>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

L1N60Z

N-Channel Power MOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MDZ1N60UMH

N-ChannelMOSFET600V,0.4A

RECTRON

Rectron Semiconductor

MIP1N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MIP1N60E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MO1N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MSU1N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTA1N60E

FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM

TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N60

PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60

N-ChannelMosfetTransistor

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP1N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N60E

TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDDL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDTL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NFT1N60

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

NJ1N60

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60A-LI

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ1N60-BL

1.2A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
LRC/樂山
23+
TO-251TO-252
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
LUMILEDS
23+
2323()
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
LUMIS
23+
NA/
35250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
原廠
2023+
模塊
600
專營模塊,繼電器,公司原裝現(xiàn)貨
 詢價
PHILIPS/飛利浦
2018+
200
詢價
PHILIPS/飛利浦
2022+
200
原廠原裝,假一罰十
 詢價
Lumileds
20000
詢價
更多L1N60Z供應(yīng)商 更新時間2025-1-1 11:10:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多