| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-ChannelMOSFET600V,1.9A,4.5ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,1.9A,4.5ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET2.0AMPERES600VOLTS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancement-ModeSiliconGate TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
N-Channel650V(D-S)MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LONTEN(龍騰半導體) |
2112+ |
TO-220F |
105000 |
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期 |
詢價 | ||
龍騰半導體 |
23+ |
TO-220F |
4500 |
專營國產功率器件 |
詢價 | ||
LONTEN(龍騰半導體) |
23+ |
TO220F3 |
6000 |
誠信服務，絕對原裝原盤 |
詢價 | ||
24+ |
N/A |
76000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
LONTEN/龍騰 |
2024+ |
TO-220F |
188600 |
全新原廠原裝正品現貨 歡迎咨詢 |
詢價 | ||
LINEAR_DIMENSIONS |
23+ |
NA |
25060 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
Sensata-Crydom |
23+ |
Hockey Puck |
436 |
深圳現貨庫存/下單即發(fā)/原裝正品 |
詢價 | ||
LONTEN/龍騰 |
24+ |
TO-220F |
30000 |
專營LT龍騰原裝保障 |
詢價 |
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