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MDD2N60

N-Channel 650 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MDD2N60

N-Channel MOSFET 600V, 1.9A, 4.5ohm

MGCHIP

MagnaChip Semiconductor.

MDD2N60RH

N-Channel MOSFET 600V, 1.9A, 4.5ohm

MGCHIP

MagnaChip Semiconductor.

ME2N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

MSD2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSF2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSQ2N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSU2N60S

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTB2N60E

TMOSPOWERFET2.0AMPERES600VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB2N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTN2N60CFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60DFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN2N60FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP2N60

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP2N60E

TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP2N60E

N-ChannelEnhancement-ModeSiliconGate

TMOSE?FETPowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage?blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE?FETisdesignedtowithstandhi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP2N60E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP2N60E

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

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Magnachip
2018+
26976
代理原裝現(xiàn)貨/特價(jià)熱賣(mài)!
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MDD
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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M
23+
SOT-252
10000
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美格納
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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美格納
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
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M
22+
SOT-252
6000
十年配單,只做原裝
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美格納
2048+
TO-252
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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VBsemi
21+
TO252
10026
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
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VBsemi
2229+
TO252
6325
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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VBsemi
24+
TO252
6325
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更多MDD2N60供應(yīng)商 更新時(shí)間2025-1-8 16:31:00