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LPD200SOT343中文資料FILTRONIC數(shù)據(jù)手冊(cè)PDF規(guī)格書

LPD200SOT343
廠商型號(hào)

LPD200SOT343

功能描述

PACKAGED HIGH DYNAMIC RANGE PHEMT

文件大小

68.02 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 Filtronic Compound Semiconductors
企業(yè)簡(jiǎn)稱

FILTRONIC

中文名稱

Filtronic Compound Semiconductors官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-29 13:56:00

LPD200SOT343規(guī)格書詳情

DESCRIPTION AND APPLICATIONS

The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package.

The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications.

FEATURES

? 0.6 dB Noise Figure at 2 GHz

? 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz

? 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz

? 50 Power-Added-Efficiency at 2 GHz

產(chǎn)品屬性

  • 型號(hào):

    LPD200SOT343

  • 制造商:

    FILTRONIC

  • 制造商全稱:

    FILTRONIC

  • 功能描述:

    PACKAGED HIGH DYNAMIC RANGE PHEMT

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