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M29DW128F60NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

M29DW128F60NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6T

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Featuressummary ■SupplyVoltage –VCC=2.7Vto3.6VforProgram,Eraseand Read –VCCQ=1.65Vto3.6VforInput/Output –VPP=12VforFastProgram(optional) ■ASYNCHRONOUSRANDOM/PAGEREAD –PageWidth:8Words –PageAccess:25,30ns –RandomAccess:60,70ns ■PROGRAMMINGTIME –1

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

M29DW128F60NF6E

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

M29DW128F60NF6F

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

NUMONYX

numonyx

詳細參數

  • 型號：

    M29DW128F60NF6

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

供應商型號品牌批號封裝庫存備注價格
ST
2025+
TSSOP
3577
全新原廠原裝產品、公司現貨銷售
 詢價
ST
21+
BGA
23480
詢價
ST
16+
BGA
2500
進口原裝現貨/價格優(yōu)勢!
 詢價
ST
24+
BGA
35200
一級代理/放心采購
 詢價
ST
24+
BGA
6500
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
ST
25+
BGA
25000
全新原裝現貨 假一賠十
 詢價
MICRON
1844+
BGA
6528
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
Micron Technology Inc.
21+
60-TFBGA
5280
進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
 詢價
NUYX
24+
64TBGA
28500
授權代理直銷,原廠原裝現貨,假一罰十,特價銷售
 詢價
MICRON
20+
BGA-64
1001
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多M29DW128F60NF6供應商 更新時間2025-3-11 10:07:00

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