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M2V64S40BTP-10L中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書
M2V64S40BTP-10L規(guī)格書詳情
DESCRIPTION
The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP achieve very high speed data rate up to 125MHz, and are suitable for main memory or graphic memory in computer systems.
FEATURES
- Single 3.3v ± 0.3v power supply
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A9 (x4), A0-A8(x8), A0-A7(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
- Clock frequency 125MHz /100MHz
- Auto precharge / All bank precharge controlled by A10
產(chǎn)品屬性
- 型號：
M2V64S40BTP-10L
- 制造商：
MITSUBISHI
- 制造商全稱：
Mitsubishi Electric Semiconductor
- 功能描述：
64M bit Synchronous DRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MIT |
17+ |
SOJ50 |
9988 |
只做原裝進(jìn)口,自己庫存 |
詢價 | ||
MITSUBISH |
24+ |
TSSOP |
35200 |
一級代理/放心采購 |
詢價 | ||
MITSUBISHI/三菱 |
23+ |
NA/ |
3350 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
MITSUBISHI/三菱 |
22+ |
TSSOP-54 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
MIT |
2402+ |
TSOP |
8324 |
原裝正品!實(shí)單價優(yōu)! |
詢價 | ||
MIT |
TSOP |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MIT |
24+ |
TSOP |
126 |
詢價 | |||
MIT |
SOJ50 |
18 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | |||
MIT |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
MIT |
2023+ |
TSSOP |
3365 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 |
