M36DR432CA10ZA6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

The two components are distinguished by use with three chip enable inputs: EF for the Flash memory and, E1S and E2S for the SRAM. The two components are also separately power supplied and grounded.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDDF = VDDS =1.9V to 2.1V

– VPPF = 12V for Fast Program (optional)

■ ACCESS TIME: 85,100ns

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36DR432C: 00A4h

– Bottom Device Code, M36DR432D: 00A5h

FLASH MEMORY

■ 32 Mbit (2Mb x16) BOOT BLOCK

– Parameter Blocks (Top or Bottom Location)

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ ASYNCRONOUS PAGE MODE READ

– Page width: 4 Word

– Page Mode Access Time: 35ns

■ DUAL BANK OPERATION

– Read within one Bank while Program or Erase within the other

– No Delay between Read and Write Operations

■ BLOCK PROTECTION ON ALL BLOCKS

– WPF for Block Locking

■ COMMON FLASH INTERFACE

– 64 bit Security Code

SRAM

■ 4 Mbit (256K x 16 bit)

■ LOW VDDS DATA RETENTION: 1V

■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS