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首頁(yè) >M36DR432CZA>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
M36DR432CZA	文件：330.36 Kbytes Page：46 Pages	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432A	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432AD	文件：834.14 Kbytes Page：52 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432ADZA	文件：834.14 Kbytes Page：52 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432AZA	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432B	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432BD	文件：834.14 Kbytes Page：52 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432BDZA	文件：834.14 Kbytes Page：52 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kbx16SRAM,MultipleMemoryProduct SUMMARYDESCRIPTION TheM36DR432AD/BDisalow-voltageMultipleMemoryProductwhichcombinestwomemorydevices:a32Mbit(2Mbitx16)non-volatileFlashmemoryanda4MbitSRAM. ThememoryisavailableinaStackedLFBGA6612x8mm-8x8activeballarray,0.8mmpitchpackageandsuppliedwit	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432BZA	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432C	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432D	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432DZA	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432-ZAT	文件：328.77 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. FEATURESSUMMARY ■SUPPLYVOLTAGE –VDDF=VDDS=1.65Vto2.2V –VPPF=12VforFastProgram(opt	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
M36DR432-ZAT	文件：330.36 Kbytes Page：46 Pages	32Mbit2Mbx16,DualBank,PageFlashMemoryand4Mbit256Kx16SRAM,MultipleMemoryProduct DESCRIPTION TheM36DR432isamultichipmemorydevicecontaininga32MbitbootblockFlashmemoryanda4MbitofSRAM.ThedeviceisofferedinaStackedLFBGA66(0.8mmpitch)package. Thetwocomponentsaredistinguishedbyusewiththreechipenableinputs:EFfortheFlashmemoryand,E1S	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市佳鑫美電子科技有限公司	M36DR864CB85ZA	STM	24+	BGA	2568	原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨	詢價(jià)
深圳市威雅利發(fā)展有限公司	M36DR864CB85ZA	ST	0341+	BGA	1800	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市遠(yuǎn)進(jìn)半導(dǎo)體有限公司	M36DR864CB85ZA	ST	22	BGA	25000	3月31原裝,微信報(bào)價(jià)	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	M36DR864CB85ZA	ST		BGA	893993	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市匯萊威科技有限公司	M36DR864CB85ZA	ST			589220	16余年資質(zhì) 絕對(duì)原盒原盤更多數(shù)量	詢價(jià)
深圳市吉中創(chuàng)電子科技有限公司	M36DR864CB85ZA	ST	23+	BGA	25000	原廠/代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市宏興瑞科技有限公司	M36DR864CB85ZA	ST	23+	原裝正品現(xiàn)貨	10000	BGA	詢價(jià)
深圳市鵬錦翔科技有限公司	M36DR864CB85ZA	ST	25+	BGA	25000	全新原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	M36DR864CB85ZA6	STM	24+	BGA	581		詢價(jià)
深圳市星佑電子有限公司	M36DR864CB85ZA6	ST	05+	原廠原裝	2451	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)

更多M36DR432CZA供應(yīng)商更新時(shí)間2025-1-7 11:15:00

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