M58LW032C110N6E中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

M58LW032C is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY

■ WIDE x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

– VDDQ = 1.8 to VDD for I/O Buffers

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Asynchronous Random Read

– Asynchronous Address Latch Controlled Read

– Page Read

■ ACCESS TIME

– Synchronous Burst Read up to 56MHz

– Asynchronous Page Mode Read 90/25ns, 110/25ns

– Random Read 90ns, 110ns

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 12μs Word effective programming time

■ 32 UNIFORM 64 KWord MEMORY BLOCKS

■ ENHANCED SECURITY

– Block Protection/ Unprotection

– Smart Protection: irreversible block locking system

– VPEN signal for Program Erase Enable

– 128 bit Protection Register with 64 bit Unique Code in OTP area

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW032C : 8822h