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M5M4V4265CJ-7中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書

M5M4V4265CJ-7
廠商型號

M5M4V4265CJ-7

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

文件大小

317.4 Kbytes

頁面數(shù)量

31

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡稱

Mitsubishi三菱電機(jī)

中文名稱

三菱電機(jī)株式會社官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-14 14:04:00

M5M4V4265CJ-7規(guī)格書詳情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360μW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100μA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100μA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

產(chǎn)品屬性

  • 型號:

    M5M4V4265CJ-7

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
MIT
2016+
TSOP/40
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品!
詢價(jià)
MITSUBIS
99+
TSOP40
40
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價(jià)
24+
SMD40
6
自己現(xiàn)貨
詢價(jià)
MIT
98+
TSSOP
223
就找我吧!--邀您體驗(yàn)愉快問購元件!
詢價(jià)
MITSUBISHI
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價(jià)
MITSUBISHI
TSOP
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價(jià)
MIT
21+
TSSOP
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
詢價(jià)
MITSUBISHI
2023+
TSSOP
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
詢價(jià)
MITSUBISHI
23+
原裝正品現(xiàn)貨
10000
TSOP
詢價(jià)
MIT
20+
TSOP
2960
誠信交易大量庫存現(xiàn)貨
詢價(jià)