首頁 >MAX3636ETM+>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MAX3636ETM+ | 包裝:卷帶(TR) 封裝/外殼:48-WFQFN 裸露焊盤 類別:集成電路(IC) 應(yīng)用特定時(shí)鐘/定時(shí) 描述:IC CLOCK GENERATOR PROGR 48TQFP | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
包裝:卷帶(TR) 封裝/外殼:48-WFQFN 裸露焊盤 類別:集成電路(IC) 應(yīng)用特定時(shí)鐘/定時(shí) 描述:IC CLOCK GENERATOR PROGR 48TQFP | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS | PMI Premier Magnetics, Inc. | PMI | ||
SPLITBOBBINHIGHISOLATIONPOWERTRANSFORMERS | PMI Premier Magnetics, Inc. | PMI | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
HighSensitivityUnipolarSwitch | PROLIFICProlific Technology Inc. 旺玖科技旺玖科技股份有限公司 | PROLIFIC | ||
3.8V~24Voperation | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0 Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A( | TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司 | TECHPUBLIC |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
MAX3636ETM+
- 制造商:
Microsemi Corporation
- 類別:
集成電路(IC) > 應(yīng)用特定時(shí)鐘/定時(shí)
- 包裝:
卷帶(TR)
- PLL:
是
- 主要用途:
以太網(wǎng),光纖通道,PCI Express(PCIe),SONET/SDH
- 輸入:
LVCMOS,LVPECL,晶體
- 輸出:
LVCMOS,LVDS,LVPECL
- 比率 - 輸入:
3:10
- 差分 - 輸入:
是/是
- 頻率 - 最大值:
800MHz
- 電壓 - 供電:
3V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C
- 安裝類型:
表面貼裝型
- 封裝/外殼:
48-WFQFN 裸露焊盤
- 供應(yīng)商器件封裝:
48-TQFN(7x7)
- 描述:
IC CLOCK GENERATOR PROGR 48TQFP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Microsemi Corporation |
21+ |
48-TQFN(7x7) |
53200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
MICROSEMI |
20+ |
QFN-48 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Microsemi Corporation |
22+ |
48TQFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Microsemi Corporation |
21+ |
48TQFN |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
Microsemi Corporation |
21+ |
48TQFN |
610880 |
本公司只售原裝 支持實(shí)單 |
詢價(jià) | ||
Microsemi Corporation |
23+ |
48TQFN |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
Microsemi Corporation |
24+ |
48-WFQFN 裸露焊盤 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
MAXIM |
23+ |
NA |
25060 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
Microsemi/美高森美 |
18+ |
QFN |
23579 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價(jià) |
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