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MCH6635

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-PurposeSwitchingDeviceApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?2.5Vdrive. ?Compositetypewith2MOSFETscontainedinasinglepackage,facilitainghigh-densitymounting.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

AD6635

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

AD6635BB

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

AD6635BB/PCB

4-Channel,80MSPSWCDMAReceiveSignalProcessor(RSP)

GENERALDESCRIPTION TheAD6635isamultimode,8-channel,digitalReceiveSignalProcessor(RSP)capableofprocessinguptofourWCDMAchannels.Eachchannelconsistsoffourcascadedsignal-processingelements:afrequencytranslator,twoCICdecimatingfilters,andaprogrammablecoefficient-d

ADAnalog Devices

亞德諾亞德諾半導體技術(shù)有限公司

AEC-6635

FanlessEmbeddedControllerWithIntelCorei7/i5Processor

AAEONAAEON Technology

研揚科技研揚科技（蘇州）有限公司

AWT6635

HELP3DCTM(Band5)LTE/WCDMA/CDMALinearPAModule

ANADIGICS

ANADIGICS, Inc

CPH6635

ComplementaryDualCPH6PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

CPH6635-TL-H

ComplementaryDualCPH6PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

EM6635

LowPowerMicrocontrollerwithRCand32kHzoscillatorsand9highdriveoutputs

EMMICRO

EM Microelectronic - MARIN SA

FDD6635

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features ?59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

MAX6635

12-BitPlusSignTemperatureSensorswithSMBus/I2C-CompatibleSerialInterface

GeneralDescription TheMAX6633/MAX6634/MAX6635combineatemperaturesensor,aprogrammableovertemperaturealarm,andanSMBus/I2C-compatibleserialinterfaceintoasinglepackage. Features ●+3Vto+5.5VSupplyRange ●Accuracy ??±1°Cmax(0°Cto+50°C) ??±1.5°Cmax(-20°Cto+85°C) ?

MaximMaxim Integrated Products

美信美信半導體

詳細參數(shù)

  • 型號：

    MCH6635

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    P-Channel Silicon MOSFET General-Purpose Switching Device Applications

供應商型號品牌批號封裝庫存備注價格
SOT-363
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
ON
23+
MCPH6
63000
原裝正品現(xiàn)貨
 詢價
原裝SANYO
2023+
SOT-363
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
SANYO
19+
MCPH6
200000
詢價
SANYO/三洋
20+
MCPH6
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
SANYO
24+
MCPH6
18800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
SANYO
24+
MCPH6
66540
原裝現(xiàn)貨假一賠十
 詢價
SANYO/三洋
22+
MCPH6
354000
詢價
SANYO/三洋
23+
MCPH6
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多MCH6635供應商 更新時間2025-1-11 17:00:00

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