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MIO-5350

Intel?PentiumN4200CeleronN3350&Atom??E3950/E3940/E3930,3.5

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國(guó)）有限公司

PB5350

50VlowVCEsatPNPtransistor

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

PNPtransistor

DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES ?Highcurrentcapabilities ?LowVCEsat. APPLICATIONS ?Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers ?VCEsatcriticalapplica

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50VlowVCEsatPNPtransistor

Generaldescription 150WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom2500MHzto2700MHz. Featuresandbenefits ■Excellentruggedness ■Highefficiency ■LowRthprovidingexcellentthermalstability ■Designedforbroadbandoperation(2500MHzto2700MHz) ■

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350D

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350D

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgenera

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350D-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgene

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350PAS

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350PAS-Q

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350S

Highpowerdissipation(830mW)

DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS5350SS

50V,2.7ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350SS

50V,2.7APNP/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

50V,3APNPlowVCEsat(BISS)transistor

DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatge

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS5350T

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

PBSS5350T

50V,3APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS5350T

TRANSISTOR(PNP)

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting LCDback-lighting Supplylineswitchingcircuits.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

PBSS5350TH

50V,3APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapability:ICandICM ?Highcollector

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MIC5350-SGYMT TR

  • 功能描述：

    低壓差穩(wěn)壓器 - LDO Dual 500mA/300mA LDO in 2mm x 2mm Thin MLF

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 最大輸入電壓：

    36 V

  • 輸出電壓：

    1.4 V to 20.5 V

  • 回動(dòng)電壓（最大值）：

    307 mV

  • 輸出電流：

    1 A

  • 負(fù)載調(diào)節(jié)：

    0.3 %

  • 輸出類(lèi)型：

    Fixed

  • 最大工作溫度：

    + 125 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-20

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更多MIC5350-SGYMT TR供應(yīng)商 更新時(shí)間2025-1-20 8:32:00

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