| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MJ11014 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ..designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. FEATURES: *HighGainDarlingtonPerformance *HighDCCurrentGainhFE=1000(Min)@lc=20A *MonolithicConstructionwithBuilt-inBase-EmitterS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | |
MJ11014 | POWER TRANSISTORS(30A,60-120V,200W) COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighGainDarlingtonPerformance ?HighDCCurrentGainhFE=1000(Min)@IC=20A ?MonolithicConstructionwithBuilt?inBaseEmitterShun | MOSPECMospec Semiconductor 統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司 | MOSPEC | |
MJ11014 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain—hFE=1000(Min)@IC–20Adc ?MonolithicConstructionwithBuilt–inBaseEmitterShuntResistor ?JunctionTemperatureto+200°C | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MJ11014 | 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS High-CurrentComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. ?HighDCCurrentGain-hFE=1000(Min)@IC?20Adc ?MonolithicConstructionwithBuilt?inBaseEmitterShuntResistor ?JunctionTemperatureto+200C | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
MJ11014 | NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS | WINGSWing Shing Computer Components 永盛電子永盛電子(香港)有限公司 | WINGS | |
MJ11014 | Power Transistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | |
MJ11014 | isc Silicon NPN Darlington Power Transistor DESCRIPTION ?Collector-EmitterBreakdownVoltage- :V(BR)CEO=90V(Min.) ?HighDCCurrentGain- :hFE=1000(Min.)@IC=20A ?LowCollectorSaturationVoltage- :VCE(sat)=3.0V(Max.)@IC=20A ?ComplementtoTypeMJ11013 APPLICATIONS ?Designedforuseasoutputdevicesi | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
MJ11014 | Bipolar NPN Device in a Hermetically sealed TO3 | SEME-LAB Seme LAB | SEME-LAB | |
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
StandardRecoveryDiodes | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-N+Darl+Di
- 性質(zhì)：
開關(guān)管 （S）_功率放大 （L）
- 封裝形式：
直插封裝
- 極限工作電壓：
90V
- 最大電流允許值：
30A
- 最大工作頻率：
>4MHZ
- 引腳數(shù)：
2
- 可代換的型號(hào)：
BDX68B...C,
- 最大耗散功率：
200W
- 放大倍數(shù)：
β>1000
- 圖片代號(hào)：
E-44
- vtest：
90
- htest：
4000100
- atest：
30
- wtest：
200
詳細(xì)參數(shù)
- 型號(hào)：
MJ11014
- 制造商：
Solid State Devices Inc(SSDI)
- 功能描述：
TO 3 30 Amp Darlington Transistors NPN
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托羅拉 |
22+ |
TO3 |
21000 |
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。 |
詢價(jià) | ||
MOT |
06+ |
原廠原裝 |
594 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
MOT |
24+ |
TO-3 |
10000 |
詢價(jià) | |||
MOT/ON |
24+ |
TO-3 |
600 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ISC |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
ST |
24+ |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) | |||
ON |
23+ |
TO-03 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
STMICROEL |
23+ |
NA |
304 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
MOTOROLA |
18+ |
TO-3 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
18 |
TO-03 |
200 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) |
