零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MJD31C | SILICON POWER TRANSISTORS ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJD31C | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
MJD31C | General Purpose Amplifier Low Speed Switching Applications NPNEpitaxialSiliconTransistor Features ?GeneralPurposeAmplifier ?LowSpeedSwitchingApplications ?LoadFormedforSurfaceMountApplication(NoSuffix) ?StraightLead(I-PAK,“-I”Suffix) ?ElectricallySimilartoPopularTIP31andTIP31C | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | |
MJD31C | NPN SURFACE MOUNT TRANSISTOR Features ?BVCEO>100V ?IC=3AhighContinuousCollectorCurrent ?ICM=5APeakPulseCurrent ?IdealforPowerSwitchingorAmplificationApplications ?ComplementaryPNPType:MJD32C ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green” | DIODES Diodes Incorporated | DIODES | |
MJD31C | Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | |
MJD31C | TRANSISTOR (NPN) FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri | FS First Silicon Co., Ltd | FS | |
MJD31C | Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves ?StraightLeadVersioninPlasticSleeves(“1”Suffix) ?LeadFormedVersi | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJD31C | 3A , 100V NPN Plastic Encapsulated Transistor FEATURES ?Designedforgeneral ?ExcellentDCCurrentGainCharacteristics | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
MJD31C | Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd | TGS | |
MJD31C | Silicon NPN epitaxial planer Transistors Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?ElectricallySimilartoPopularTIP31andTIP32 | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | |
MJD31C | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ?DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“–1”Suffix) ?LeadFormedVersionin16mmTapeandReel(“T4”Suff | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | |
MJD31C | 100 V, 3 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32C 2.Featuresandbenefits ?Highthermalpowerdissipationcapability ?Highenergyefficiencyduetolessheatgeneration ?Elect | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | |
MJD31C | Silicon NPN Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.2V(Max)@IC=3A ·ComplementtoTypeMJD32C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
MJD31C | Low voltage NPN power transistor Description Thedeviceismanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Surface-mountingTO-252powerpackagein tapeandreel ■ComplementarytothePNPtyp | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
MJD31C | Low voltage NPN power transistor Description ThedeviceismanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Generalfeatures ■Thisdeviceisqualifiedforautomotiveapplication ■Surface-mounting | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
MJD31C | Complementary Power Transistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJD31C | isc Silicon NPN Power Transistors | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | |
MJD31C | 100V NPN HIGH VOLTAGE TRANSISTOR | DIODES Diodes Incorporated | DIODES | |
MJD31C | Complementary Power Transistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | |
MJD31C | 包裝:散裝 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導體產品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 100V 3A DPAK | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產廠家:
- 制作材料:
- 性質:
低頻或音頻放大 (LF)_功率放大 (PA)
- 封裝形式:
貼片封裝
- 極限工作電壓:
- 最大電流允許值:
3A
- 最大工作頻率:
<1MHZ或未知
- 引腳數:
3
- 可代換的型號:
- 最大耗散功率:
15W
- 放大倍數:
- 圖片代號:
G-217
- vtest:
0
- htest:
999900
- atest:
3
- wtest:
15
產品屬性
- 產品編號:
MJD31C
- 制造商:
STMicroelectronics
- 類別:
分立半導體產品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
散裝
- 晶體管類型:
NPN
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
1.2V @ 375mA,3A
- 電流 - 集電極截止(最大值):
50μA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
10 @ 3A,4V
- 工作溫度:
150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-252-3,DPak(2 引線 + 接片),SC-63
- 供應商器件封裝:
DPAK
- 描述:
TRANS NPN 100V 3A DPAK
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
DIODES |
SOT-252 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
ON |
23+ |
DPAK |
56000 |
詢價 | |||
CJ/長電 |
24+ |
TO-252 |
3580 |
原裝現貨/15年行業(yè)經驗歡迎詢價 |
詢價 | ||
ON/安森美 |
24+ |
DPAK |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
實數CJ |
22+ |
TO252-2L |
25000 |
原裝現貨、假一賠十 |
詢價 | ||
ON |
24+ |
TO-252 |
15300 |
絕對原裝現貨,價格低,歡迎詢購! |
詢價 | ||
ON |
24+ |
DPAK-3 |
14950 |
詢價 | |||
CJ/長電 |
2021+ |
TO-252 |
9000 |
原裝現貨,隨時歡迎詢價 |
詢價 | ||
NXP |
23+ |
TO-252 |
15000 |
原裝進口、正品保障、合作持久 |
詢價 | ||
ST/意法 |
24+ |
TO-252 |
504580 |
免費送樣原盒原包現貨一手渠道聯系 |
詢價 |
相關規(guī)格書
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相關庫存
更多- MJD32C
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