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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
MMP65R190P	文件：1.20266 Mbytes Page：10 Pages	650V 0.19(ohm) N-channel MOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP
MMP65R190PTH	文件：333.28 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MMP65R190PTH	文件：1.20266 Mbytes Page：10 Pages	650V 0.19(ohm) N-channel MOSFET	MGCHIP MagnaChip Semiconductor.	MGCHIP
65R190	文件：450.41 Kbytes Page：6 Pages	20A竊?50VN-CHANNELMOSFET	KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司	KIA
IIPP65R190CFD	文件：339.16 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IIPW65R190CFD	文件：335.92 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPA65R190CFD	文件：261.04 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R190CFD	文件：189.53 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPB65R190CFDA	文件：2.19785 Mbytes Page：16 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：331.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRIPTION ?ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	650VCoolMOSC6CFDPOWERTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPI65R190CFD	文件：6.53687 Mbytes Page：20 Pages	MetalOxideSemiconduvtorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP65R190CFD	文件：3.83053 Mbytes Page：20 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市國(guó)宇半導(dǎo)體科技有限公司	MMP65R190PTH	M	23+	TO-220	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	MMP65R190PTH	MAGNACHIP/美格納	2022+	TO-220	50000	原廠代理終端免費(fèi)提供樣品	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	MMP65R190PTH	M	23+	TO-220	6000	原裝正品，支持實(shí)單	詢價(jià)
深圳市躍創(chuàng)芯科技有限公司	MMP65R190PTH	MAGNACHIP/美格納	2022+	TO-220	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝假一罰十	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	MMP65R190PTH	MAGNACHIP/美格納	2022+	TO-220	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價(jià)
深圳市宏捷佳電子科技有限公司	MMP65R190PTH	M	24+	TO-TO-220	12300	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市易訊博科技有限公司	MMP6P15K-F	Cornell	22+	NA	75	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	MMP6P15K-F	CDE	23+	Axial	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市匯萊威科技有限公司	MMP6P15K-F	CDE	24+	Axial	68900	一站配齊原盒原包現(xiàn)貨朱S Q2355605126	詢價(jià)
深圳市科雨電子有限公司	MMP6P1K-F	CORNELL	20+	電容器	2926	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)

更多MMP65R190P供應(yīng)商更新時(shí)間2024-11-16 14:30:00

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