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MP6N120-C-BR

N-CHANNEL MOSFET

APPLICATIONS ?Highefficiencyswitchmode powersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?PlanarMOS ?Lowgatecharge ?LowCrss(typical7.0pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

DTP6N120SC

1200VN-ChannelSiliconCarbidePowerMOSFET

Features ?Highblockingvoltage ?Highspeedswitchingwithlowcapacitance ?Highoperatingjunctiontemperaturecapability ?Veryfastandrobustintrinsicbodydiode Applications ?Solarinverters ?UPS ?HighvoltageDC/DCconverters ?Switchmodepowersupplies

DINTEK

DinTek Semiconductor Co,.Ltd

IXFA6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFA6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFA6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXFH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH6N120

HighVoltageHiPerFETPowerMOSFET

HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandto

IXYS

IXYS Corporation

IXFH6N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFH6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXFP6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFP6N120P

PolarHiPerFETPowerMOSFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant

IXYS

IXYS Corporation

IXFP6N120P

PowerMOSFET

IXYS

IXYS Corporation

IXTH6N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighpowerdensity

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTH6N120

HighVoltagePowerMOSFET

IXYS

IXYS Corporation

IXTT6N120

HighVoltagePowerMOSFET

IXYS

IXYS Corporation

MP6N120-C-B

N-CHANNELMOSFET

APPLICATIONS ?Highefficiencyswitchmode powersupplies ?Electroniclampballasts basedonhalfbridge ?UPS FEATURES ?PlanarMOS ?Lowgatecharge ?LowCrss(typical7.0pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

RS6N120BH

Nch80V135APowerMOSFET

Features 1)Lowon-resistance 2)Highpowerpackage(HSOP8) 3)Pb-freeplating;RoHScompliant 4)Halogenfree 5)100%RgandUIStested Application Switching

ROHMRohm

羅姆羅姆半導體集團

供應商型號品牌批號封裝庫存備注價格
只做原裝
24+
QFN
36520
一級代理/放心采購
 詢價
MY-POWER
23+
QFN
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
松木
18+
DIP
60000
電解電容絕對現(xiàn)貨庫存,樣品可出,量大價優(yōu)
 詢價
松木
23+
6.3V560UF
9657
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MATSUKI
NA
8560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
松木
22+
SMD
12000
只做原裝、原廠優(yōu)勢渠道、假一賠十
 詢價
MATSUKI
23+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
松木
22+
SMD
12000
只做原裝、原廠優(yōu)勢渠道、假一賠十
 詢價
松木
23+
SMD
6850
只做原廠原裝正品現(xiàn)貨!假一賠十!
 詢價
松木
23+
NA
999999
原裝正品現(xiàn)貨量大可訂貨
 詢價
更多MP6N120-C-BR供應商 更新時間2025-1-9 10:24:00

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