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The RF MOSFET Line RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

? Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture

Output Power – 60 Watts

Power Gain – 13 dB

Efficiency – 50

? Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture

Output Power – 100 Watts (PEP)

Power Gain – 11.2 dB

Efficiency – 40

IMD – –30 dBc

? Excellent Thermal Stability

? 100 Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW