MRF6S18100NR1分立半導體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

GSM Application

? Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA,

Pout = 100 Watts, f = 1990 MHz

Power Gain — 14.5 dB

Drain Efficiency — 49

GSM EDGE Application

? Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,

Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or

1930-1990 MHz)

Power Gain — 15 dB

Drain Efficiency — 35

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -76 dBc

EVM — 2 rms

? Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power

Features

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

? 225°C Capable Plastic Package

? RoHS Compliant

? In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.