MRF6S19060N

RF Power Field Effect Transistors

MRF6S19060NBR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforN-CDMAbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLap

MRF6S19060NR1

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforN-CDMAbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLap

MRF6S19060NBR1

RF Power Field Effect Transistors

MRF6S19060NR1

RF Power Field Effect Transistors

MRF6S19060NR1_08

RF Power Field Effect Transistors

MRF6S19060NBR1

Package：TO-272BB；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 68V 1.93GHZ TO272-4

NXP USA Inc.

MRF6S19060NR1

Package：TO-270AB；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 68V 1.93GHZ TO270-4

NXP USA Inc.