MRF7S21170HR3

RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.TobeusedinClassABandClassCforPCN-PCS/cellularradioandWLLappl

MRF7S21170HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S21170HR3

RF Power Field Effect Transistors

MRF7S21170HR3

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF7S21170HR3

RF Power Field Effect Transistors

MRF7S21170HR3

Package：SOT-957A；包裝：托盤 類別：分立半導體產品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 2.17GHZ NI-880

NXP USA Inc.

MRF7S21170HR3_07

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S21170HR3_08

RF Power Field Effect Transistors

MRF7S21170HR3_11

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF7S21170HR3_12

RF Power Field Effect Transistors