MRFE6S9135HSR3分立半導體產品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment.

? Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =

1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,

64 DPCH with 50 Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01 Probability on CCDF.

Power Gain — 21 dB

Drain Efficiency — 32.3

Device Output Signal PAR — 6.4 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset — -39.5 dBc in 3.84 MHz Channel Bandwidth

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW

(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large-Signal Impedance Parameters

? Internally Matched for Ease of Use

? Qualified Up to a Maximum of 32 VDD Operation

? Integrated ESD Protection

? Optimized for Doherty Applications

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.