欧美日韩在线视频一区,性感写真套图好看妹子图集,欧美一区二区三区不卡

首頁 >MSMBJ5350C>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MSMBJ5350C	文件：100 bytes Page：1 Pages	包裝：散裝封裝/外殼：DO-214AA，SMB 類別：電路保護 TVS - 二極管描述：VOLTAGE REGULATOR	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
MSMBJ5350CE3	文件：100 bytes Page：1 Pages	包裝：散裝封裝/外殼：DO-214AA，SMB 類別：電路保護 TVS - 二極管描述：VOLTAGE REGULATOR	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
PB5350	文件：156.52 Kbytes Page：9 Pages	50VlowVCEsatPNPtransistor	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350D	文件：65.41 Kbytes Page：8 Pages	PNPtransistor DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES ?Highcurrentcapabilities ?LowVCEsat. APPLICATIONS ?Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers ?VCEsatcriticalapplica	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350D	文件：153.86 Kbytes Page：9 Pages	50VlowVCEsatPNPtransistor Generaldescription 150WLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom2500MHzto2700MHz. Featuresandbenefits ■Excellentruggedness ■Highefficiency ■LowRthprovidingexcellentthermalstability ■Designedforbroadbandoperation(2500MHzto2700MHz) ■	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
PBSS5350D	文件：948.33 Kbytes Page：12 Pages	LowVCEsat(BISS)transistors	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350D	文件：999.14 Kbytes Page：9 Pages	50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgenera	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350D-Q	文件：219.55 Kbytes Page：9 Pages	50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgene	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350PAS	文件：283.44 Kbytes Page：14 Pages	50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturati	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350PAS-Q	文件：284.65 Kbytes Page：14 Pages	50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350S	文件：74.76 Kbytes Page：8 Pages	Highpowerdissipation(830mW) DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350SS	文件：100.84 Kbytes Page：14 Pages	50V,2.7APNP/PNPlowVCEsat(BISS)transistor Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain	nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司	nxp
PBSS5350SS	文件：696.38 Kbytes Page：14 Pages	50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat HighcollectorcurrentcapabilityICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350SS	文件：730.36 Kbytes Page：19 Pages	50V,2.7ANPN/PNPlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat HighcollectorcurrentcapabilityICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350SS	文件：701.01 Kbytes Page：14 Pages	50V,2.7APNP/PNPlowVCEsat(BISS)transistor Features Lowcollector-emittersaturationvoltageVCEsat HighcollectorcurrentcapabilityICandICM Highcollectorcurrentgain(hFE)athighIC Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350T	文件：948.33 Kbytes Page：12 Pages	LowVCEsat(BISS)transistors	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350T	文件：86.2 Kbytes Page：10 Pages	50V,3APNPlowVCEsat(BISS)transistor DESCRIPTION PNPlowVCEsattransistorinaSOT23plasticpackage. NPNcomplement:PBSS4350T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability ?Highcollectorcurrentgain ?Improvedefficiencyduetoreducedheatge	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PBSS5350T	文件：831.84 Kbytes Page：6 Pages	SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.	FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司	FOSHAN
PBSS5350T	文件：1.14899 Mbytes Page：11 Pages	50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350T 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat ?Highcollectorcurrentcapability	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司	NEXPERIA
PBSS5350T	文件：278.77 Kbytes Page：4 Pages	TRANSISTOR(PNP) Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting LCDback-lighting Supplylineswitchingcircuits.	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司	GWSEMI

12 3 >>>

產(chǎn)品屬性

產(chǎn)品編號：
MSMBJ5350C
制造商：
Microchip Technology
類別：
電路保護 > TVS - 二極管
包裝：
散裝
類型：
齊納
功率 - 峰值脈沖：
600W
電源線路保護：
無
應(yīng)用：
通用
工作溫度：
-65°C ~ 150°C（TJ）
安裝類型：
表面貼裝型
封裝/外殼：
DO-214AA，SMB
供應(yīng)商器件封裝：
SMBJ（DO-214AA）
描述：
VOLTAGE REGULATOR

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市凌銳智能科技有限公司	MSMBJ5350C	MICROCHIP/微芯	24+	SMT	18000	誠以養(yǎng)德,用芯做事,全新原裝原盒原標(biāo)出貨。	詢價

更多MSMBJ5350C供應(yīng)商更新時間2024-7-4 10:35:00

產(chǎn)品屬性

相關(guān)規(guī)格書

相關(guān)庫存