首頁 >MT48LC8M16A2TG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MT48LC8M16A2TG | SYNCHRONOUS DRAM
| MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | |
MT48LC8M16A2TG | SYNCHRONOUS DRAM | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | |
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
SYNCHRONOUS DRAM GeneralDescription The128MbSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining134,217,728bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthex4’s33,554,432- | MicronMicron Technology 鎂光美國鎂光科技有限公司 | Micron | ||
包裝：托盤 封裝/外殼：54-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 128MBIT PAR 54TSOP II | Micron Technology Inc. Micron Technology Inc. | Micron Technology Inc. | ||
包裝：散裝 封裝/外殼：54-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 128MBIT PAR 54TSOP II | AllianceMemory Alliance Memory, Inc. | AllianceMemory | ||
包裝：托盤 封裝/外殼：54-TSOP（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC DRAM 128MBIT PAR 54TSOP II | AllianceMemory Alliance Memory, Inc. | AllianceMemory |
詳細參數
- 型號：
MT48LC8M16A2TG
- 制造商：
Micron Technology Inc
- 功能描述：
DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
micron(鎂光) |
23+ |
標準封裝 |
7848 |
全新原裝正品/價格優(yōu)惠/質量保障 |
詢價 | ||
MICRON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網 |
詢價 | ||
MICRON |
22+ |
TSSOP |
5152 |
※※※福安甌大量現(xiàn)貨,低價甩賣※※※ |
詢價 | ||
MICRON |
24+ |
TSOP54 |
2568 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | ||
MICRON |
12+ |
SOP54 |
2500 |
原裝現(xiàn)貨/特價 |
詢價 | ||
micron(鎂光) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
micron(鎂光) |
2324+ |
NA |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價 | ||
MICRON |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
Micron |
23+ |
54-TSOP |
11923 |
詢價 | |||
MCT |
2001 |
20 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 |
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