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MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50N06VL

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06VL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50N06EL

TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
O
2020+
D2PAK
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
O
22+
D2PAK
6000
十年配單,只做原裝
 詢價
O
23+
D2PAK
6000
原裝正品，支持實單
 詢價
O
22+
D2PAK
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
VBsemi/臺灣微碧
20+
D2PAK
5031
進口原裝現(xiàn)貨,假一賠十
 詢價
24+
5000
公司存貨
 詢價
ONSEMICONDUC
05+
原廠原裝
749
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
ON
23+
TO-263
6893
詢價
ON
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
Motorola
2022+
6
全新原裝 貨期兩周
 詢價
更多MTB50N06HD供應(yīng)商 更新時間2025-3-5 11:11:00

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