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MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50N06VL

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06VL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50N06EL

TMOSPOWERFET50AMPERES60VOLTSRDS(on)=0.028OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
5000
公司存貨
 詢價
ONSEMICONDUC
05+
原廠原裝
749
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
ON
23+
TO-263
6893
詢價
ON
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
Motorola
2022+
6
全新原裝 貨期兩周
 詢價
ON
24+
T0-252
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
MOT
14
公司優(yōu)勢庫存 熱賣中!!
 詢價
ON
22+
TO-263
3000
原裝正品,支持實單
 詢價
ON/安森美
NA
90000
公司集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-
 詢價
ON
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
更多MTB50N06L供應(yīng)商 更新時間2025-2-3 16:00:00

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