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MTLB4160-HR

Marktech 0.53 Light Bar LEDs

FEATURES ?0.53lightbar ?Suitableforbacklighting ?Uniformlightemission

Marktech

Marktech Corporate

MTLB4160-O

Marktech0.53LightBarLEDs

FEATURES ?0.53lightbar ?Suitableforbacklighting ?Uniformlightemission

Marktech

Marktech Corporate

NGR4160

ReliableNeutralGroundingResistors,HighCurrentGridResistors

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

NJW4160

SwitchingRegulatorICforBuckConverter

NJRCNew Japan Radio

新日本無(wú)線株式會(huì)社

NS4160

ClassAB/ClassDswitching,ultra-lowEMI,nofilterrequired,5Wmonoaudioamplifier

?ClassAB/ClassDworkingmodeswitchingfunction ?ClassAB/ClassDworkingmodeandlow-powershutdownmodearecontrolledbyone-linepulse,savingthemaincontrolGPIO ?5Woutputpower ?0.1THD(1Woutputpower,5Vpowersupply) ?Excellentfull-bandwidthEMIsuppressioncapability ?E

NSIWAYShenzhen Naxinwei Technology Co., Ltd.

納芯威科技深圳市納芯威科技有限公司

NSL-4160

TO-18PhotocellsHermeticPackage

SILONEX

Luna Innovations Incorporated

NTJS4160N

PowerMOSFET30V,3.2A,SingleN-Channel,SC-88

LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTJS4160N

HighEfficiencyDC-DCConverters

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160DPN

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160DS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160DS

60V1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitt

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitte

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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LEDTECH
24+
DIP
1470
詢價(jià)
D/C
DIP
2
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ASI
23+
CLCC20
15238
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OMRON
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傳感器
96
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AMIS
2339+
QFP-44
5632
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AMIS
22+23+
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48244
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ZARLINK
16+
BGA
2500
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AMISEMICONDUTOR
2016+
QFP44
6528
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AMISENIC
2020+
QFP44
5000
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AMISEMICO
23+
QFP-44
89630
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更多MTLB4160-HR供應(yīng)商 更新時(shí)間2024-11-14 15:30:00

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