零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MTM15N40E | POWER FIELD EFFECT TRANSISTOR PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | |
15A,400VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC15N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET400V,15A,0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFET400V,15A,0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ElectricalCharacteristicsofIGBT GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細參數(shù)
- 型號:
MTM15N40E
- 制造商:
MOTOROLA
- 制造商全稱:
Motorola, Inc
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MOT |
24+ |
TO-3 |
153 |
詢價 | |||
MOTOROLA |
16+ |
TO-3 |
1100 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOTOROLA |
專業(yè)鐵帽 |
TO-3 |
1100 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
MOTOROLA |
22+ |
TO-3 |
6000 |
十年配單,只做原裝 |
詢價 | ||
MOTOROLA |
23+ |
TO-3 |
6000 |
原裝正品,支持實單 |
詢價 | ||
MOTOROLA |
22+ |
TO-3 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
MOT |
2020+ |
TO-3 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
MOT |
23+ |
TO-3 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
MOT |
23+ |
TO-3 |
5000 |
原裝正品,假一罰十 |
詢價 |
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相關(guān)庫存
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