| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FDP15N40 | N-Channel MOSFET 400V, 15A, 0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FDP15N40 | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FDP15N40 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelMOSFET400V,15A,0.3廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ElectricalCharacteristicsofIGBT GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighInputImpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
StrobeFlashN-ChannelLogicLevelIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InternallyClampedN-ChannelIGBT InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410Volts InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelEnhancementModesiliconGateTMOS TMOSPOWERFETs15AMPERES rDS(on)=0.3OHM350and400VOLTS N-ChannelEnhancementModesiliconGateTMOS | Motorola Motorola, Inc | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
MaximumLeadTemp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
詳細(xì)參數(shù)
- 型號(hào)：
FDP15N40
- 功能描述：
MOSFET 400V N-Channel
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
8950 |
BOM配單專家,發(fā)貨快,價(jià)格低 |
詢價(jià) | ||
onsemi |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
Fairchild |
24+ |
TO-220 |
180 |
詢價(jià) | |||
Fairchild |
23+ |
TO-220 |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
FAIRCHILD |
22+23+ |
TO220 |
9901 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
FAIRCHI |
21+ |
TO-220 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
三年內(nèi) |
1983 |
納立只做原裝正品13590203865 |
詢價(jià) | ||||
FSC/ON |
23+ |
原包裝原封 □□ |
1030 |
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫(kù)存 |
詢價(jià) | ||
Fairchild |
2020+ |
TO-220 |
34240 |
公司代理品牌,原裝現(xiàn)貨超低價(jià)清倉(cāng)! |
詢價(jià) |
相關(guān)規(guī)格書
更多- FDP16AN08A0
- FDP18N50
- FDP20N50
- FDP22N50N
- FDP2532
- FDP2572
- FDP26N40
- FDP2710_F085
- FDP3632
- FDP3652
- FDP3682
- FDP42AN15A0
- FDP51N25
- FDP5500_F085
- FDP5800
- FDP5N60NZ
- FDP61N20
- FDP7030BL
- FDP7N50
- FDP8030L
- FDP8440
- FDP8442
- FDP8443_F085
- FDP86363_F085
- FDP8870
- FDP8874
- FDP8896
- FD-PBA50
- FDPC5030SG
- FDPC8012S
- FDPC8014S
- FDPF035N06B_F152
- FDPF045N10A
- FDPF10N50FT
- FDPF10N60NZ
- FDPF12N50FT
- FDPF12N50T
- FDPF12N60NZ
- FDPF13N50NZ
- FDPF15N65
- FDPF16N50T
- FDPF17N60NT
- FDPF18N20FT_G
- FDPF18N50T
- FDPF20N50
相關(guān)庫(kù)存
更多- FDP18N20F
- FDP19N40
- FDP20N50F
- FDP24N40
- FDP2552
- FDP2614
- FDP2710
- FDP33N25
- FDP3651U
- FDP3672
- FDP39N20
- FDP-500
- FDP52N20
- FDP55N06
- FDP5N50NZ
- FDP6030BL
- FDP65N06
- FDP75N08A
- FDP7N60NZ
- FDP80N06
- FDP8441
- FDP8442_F085
- FDP8447L
- FDP8860
- FDP8870_F085
- FDP8880
- FDP8N50NZ
- FDPC1002S
- FDPC8011S
- FDPC8013S
- FDPC8016S
- FDPF041N06BL1
- FDPF085N10A
- FDPF10N50UT
- FDPF10N60ZUT
- FDPF12N50NZ
- FDPF12N50UT
- FDPF13N50FT
- FDPF14N30
- FDPF16N50
- FDPF16N50UT
- FDPF18N20FT
- FDPF18N50
- FDPF190N15A
- FDPF20N50FT
